2 s c2371 npn silicon power transistors features with to-126 package video applications maximum ratings symbol rating rating unit v ceo collector-emitter voltage 300 v v cbo collector-base voltage 300 v v ebo emitter-base voltage 7.0 v i c collector current 0.1 a p c collector power dissipation 10 w t j junction temperature -55 to +150 o c t stg storage temperature -55 to +150 o c electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v (br)ceo collector-emitter breakdown voltage (i c =1.0madc, i b =0) 300 --- vdc i cbo collector-base cutoff current (v cb =200vdc,i e =0) --- 0.1 uadc i ebo emitter-base cutoff current (v eb =7.0vdc, i c =0) --- 0.1 madc on characteristics h fe forward current transfer ratio (i c =10madc, v ce =10vdc) 40 250 --- v ce(sat) collector-emitter saturation voltage (i c =30madc, i b =3.0adc) --- 1.5 vdc
! e a d f g h j j c b l m p q n r k pin 1. emitter pin 2. collector 1 2 3 pin 3. base www. mccsemi .com revision: 2 2003/04/30
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